FCH125N60E ? n-channel superfet ? ii easy-drive mosfet ?2015 fairchild semiconductor corporation FCH125N60E rev.1.0 www.fairchildsemi.com 1 november 2015 absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter FCH125N60E unit v dss drain to source voltage 600 v v gss gate to source voltage - dc 20 v - ac (f > 1 hz) 30 i d drain current - continuous (t c = 25 o c) 29 a - continuous (t c = 100 o c) 18 i dm drain current - pulsed (note 1) 87 a e as single pulsed avalanche energy (note 2) 720 mj i ar avalanche current (note 1) 6 a e ar repetitive avalanche energy (note 1) 2.78 mj dv/dt mosfet dv/dt 100 v/ns peak diode recovery dv/dt (note 3) 20 p d power dissipation (t c = 25 o c) 278 w - derate above 25 o c2.2w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter FCH125N60E unit r jc thermal resistance, junction to case, max. 0.45 o c/w r ja thermal resistance, junction to ambient, max. 40 FCH125N60E n-channel superfet ? ii easy-drive mosfet 600 v, 29 a, 125 m features ?650 v @t j = 150c ?typ. r ds(on) = 102 m ? ultra low gate charge (typ. q g = 75 nc) ? low effective output capacitance (typ. c oss(eff) = 258 pf) ? 100% avalanche tested ?rohs compliant applications ? telecom / sever power supplies ? industrial power supplies description superfet ? ii mosfet is fairchil d semiconductor?s brand-new high voltage super-junction (sj) mosf et family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. this technology is tailored to minimize conduction loss , provide superior switching performance, dv/dt rate and higher avalanche energy. consequently, superfet ii mosfet easy-drive series offers slightly slower rise and fall times compared to the superfet ii mosfet series. noted by the ?e? part number suffix, this family helps manage emi issues and al lows for easier design implementation. for faster switching in applications where switching losses must be at an absolute minimum, please consider the superfet ii mosfet series. g s d g d s to-247
www.fairchildsemi.com 2 ?2015 fairchild semiconductor corporation FCH125N60E rev. 1.0 FCH125N60E ? n-channel superfet ? ii easy-drive mosfet package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics part number top mark package packing method reel size tape width quantity FCH125N60E FCH125N60E to-247 tube n/a n/a 30 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v, i d = 10 ma, t j = 25 c 600 - - v v gs = 0 v, i d = 10 ma, t j = 150 c 650 - - v bv dss / t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 o c-0.7-v/ o c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v - - 1 a v ds = 480 v, v gs = 0 v,t c = 125 o c- 2 - i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-3.5v r ds(on) static drain to source on resistance v gs = 10 v, i d = 14.5 a - 102 125 m g fs forward transconductance v ds = 20 v, i d = 14.5 a -25-s c iss input capacitance v ds = 380 v, v gs = 0 v, f = 1 mhz - 2250 2990 pf c oss output capacitance - 60 80 pf c rss reverse transfer capacitance - 17 - pf c oss(eff.) effective output capacitance v ds = 0 v to 480 v, v gs = 0 v - 258 - pf q g(tot) total gate charge at 10v v ds = 380 v, i d = 14.5 a, v gs = 10 v (note 4) -7595nc q gs gate to source gate charge - 10 - nc q gd gate to drain ?miller? charge - 33 - nc esr equivalent series resistance f = 1 mhz - 3.5 - t d(on) turn-on delay time v dd = 380 v, i d = 14.5 a, v gs = 10 v, r g = 4.7 (note 4) -2356ns t r turn-on rise time - 20 50 ns t d(off) turn-off delay time - 106 222 ns t f turn-off fall time - 23 56 ns i s maximum continuous drain to source diode forward current - - 29 a i sm maximum pulsed drain to source diode forward current - - 87 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 14.5 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 14.5 a, di f /dt = 100 a/ s - 376 - ns q rr reverse recovery charge - 6.5 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature. 2. i as = 6.0 a, r g = 25 , starting t j = 25 c 3. i sd 14.5 a, di/dt 200 a/ s, v dd 380 v, starting t j = 25 c 4. essentially independent of operating temperature.
www.fairchildsemi.com 3 ?2015 fairchild semiconductor corporation FCH125N60E rev. 1.0 FCH125N60E ? n-channel superfet ? ii easy-drive mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 234567 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.3 1 10 1 10 100 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v 0 20406080100 0.0 0.1 0.2 0.3 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.00.30.60.91.21.5 0.001 0.01 0.1 1 10 100 -55 o c *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 10 -1 11010 2 10 3 0.1 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 1632486480 0 2 4 6 8 10 v ds = 480v v ds = 300v v ds = 120v *note: i d = 14.5a v gs , gate-source voltage [v] q g , total gate charge [nc]
www.fairchildsemi.com 4 ?2015 fairchild semiconductor corporation FCH125N60E rev. 1.0 FCH125N60E ? n-channel superfet ? ii easy-drive mosfet typical performance characteristics (continued) figure 7. breakdown voltage variation figu re 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case t emperature figure 11. eoss vs. drain to s ource voltage -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 14.5a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 1 10 100 1000 0.1 1 10 100 *notes: t c = 25 o c t j = 150 o c r jc = 0.45 o c/w 100 s 1ms 10 s i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) dc 25 50 75 100 125 150 0 6 12 18 24 30 i d , drain current [a] t c , case temperature [ o c] 0 120 240 360 480 600 0 3 6 9 12 15 e oss , [ j] v ds , drain to source voltage [v]
www.fairchildsemi.com 5 ?2015 fairchild semiconductor corporation FCH125N60E rev. 1.0 FCH125N60E ? n-channel superfet ? ii easy-drive mosfet typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 110 0.005 0.01 0.1 1 z jc (t), thermal response [ o c/w ] 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.45 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse t 1 , rectangular pulse duration [sec] t 1 p dm t 2
www.fairchildsemi.com 6 ?2015 fairchild semiconductor corporation FCH125N60E rev. 1.0 FCH125N60E ? n-channel superfet ? ii easy-drive mosfet figure 14. resistive switching test circuit & waveforms figure 15. unclamped inductive switching test circuit & waveforms figure 13. gate charge test circuit & waveform v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
www.fairchildsemi.com 7 ?2015 fairchild semiconductor corporation FCH125N60E rev. 1.0 FCH125N60E ? n-channel superfet ? ii easy-drive mosfet figure 16. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
www.fairchildsemi.com 8 ?2015 fairchild semiconductor corporation FCH125N60E rev. 1.0 FCH125N60E ? n-channel superfet ? ii easy-drive mosfet mechanical dimensions figure 17. to-247, molded, 3-lead, jedec variation ab package drawings are provided as a servic e to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semic onductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_to247-003
www.fairchildsemi.com 9 ?2015 fairchild semiconductor corporation FCH125N60E rev. 1.0 FCH125N60E ? n-channel superfet ? ii easy-drive mosfet product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fa irchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. accupower? 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